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MegaMOSTMFET
IXTH 20N60 IXTM 20N60
VDSS = 600 V = 20 A ID25 RDS(on) = 0.35
N-Channel Enhancement Mode
Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C 15N60 20N60 15N60 20N60
Maximum Ratings 600 600 20 30 15 20 60 80 300 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C
TO-247 AD (IXTH)
D (TAB)
TO-204 AE (IXTM)
D G = Gate, S = Source,
G
D = Drain, TAB = Drain
Mounting torque
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times
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Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
IGSS IDSS R DS(on)
VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V TJ = 25C TJ = 125C
100 200 1 0.35
nA A mA
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Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density
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VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
(c) 2000 IXYS All rights reserved
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VGS(th)
2
4.5
V
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VDS = VGS, ID = 250 A
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VDSS
VGS = 0 V, ID = 250 A
600
V
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Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max.
Applications Switch-mode and resonant-mode power supplies Motor control Uninterruptible Power Supplies (UPS) DC choppers
l l l l
91537E(5/96)
1-4
IXTH 20N60 IXTM 20N60
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 11 18 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 420 140 20 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 , (External) 43 70 40 150 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 29 60 40 60 90 60 170 40 85 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain
1 2 3
TO-247 AD (IXTH) Outline
gfs C iss C oss C rss t d(on) tr td(off) tf Q g(on) Q gs Q gd R thJC R thCK
VDS = 10 V; ID = 0.5 * ID25, pulse test
Dim.
Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive;
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 80 1.5 600 A A
Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC
TO-204AE (IXTM) Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V V ns
Pins
1 - Gate 2 - Source Case - Drain
Dim. A A1 b D e e1
Millimeter Min. Max. 6.4 11.4 1.53 3.42 1.45 1.60 22.22 10.67 11.17 5.21 5.71
Inches Min. Max. .250 .450 .060 .135 .057 .063 .875 .420 .440 .205 .225 .440 .151 .151 1.187 .495 .131 .655 .480 .165 .165 BSC .525 .188 .675
L 11.18 12.19 p 3.84 4.19 p 1 3.84 4.19 q 30.15 BSC R 12.58 13.33 R1 3.33 4.77 s 16.64 17.14
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXTH 20N60 IXTM 20N60
Fig. 1 Output Characteristics
TJ = 25C VGS = 10V
Fig. 2 Input Admittance
40
40
6V
30
ID - Amperes
ID - Amperes
30
TJ = 25C
20
20
5V
10
10
0
0 0 5 10 15 20 0 1 2 3 4 5 6 7 8 9 10
VDS - Volts
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.40 1.35 1.30 1.25 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0 5 10 15 20 25 30 35 40
VGS = 15V VGS = 10V TJ = 25C
Fig. 4 Temperature Dependence of Drain to Source Resistance
2.50 2.25
RDS(on) - Normalized
RDS(on) - Normalized
2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50 -25 0 25 50 75 100 125 150
ID = 10A
ID - Amperes
TJ - Degrees C
Fig. 5 Drain Current vs. Case Temperature
35 30
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2
VGS(th)
1.1
BVDSS
BV/VG(th) - Normalized
25 50 75 100 125 150
25
ID - Amperes
1.0 0.9 0.8 0.7 0.6
20 15 10 5 0 -50
20N60
15N60
-25
0
0.5 -50
-25
0
25
50
75
100 125 150
TC - Degrees C
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-4
IXTH 20N60 IXTM 20N60
Fig.7 Gate Charge Characteristic Curve
10 9 8 7
VDS = 300V ID = 20A IG = 10mA
Fig.8 Forward Bias Safe Operating Area
100
10s
Limited by RDS(on)
100s 1ms
6 5 4 3 2 1 0 0 20 40 60 80 100 120 140
ID - Amperes
VGE - Volts
10
10ms
1
100ms
0.1 1 10 100
600
Gate Charge - nCoulombs
VDS - Volts
Fig.9 Capacitance Curves
4500 4000
Ciss
Fig.10 Source Current vs. Source to Drain Voltage
80 70 60
Capacitance - pF
3500
ID - Amperes
3000 2500 2000 1500 1000 500 0 0 5
f = 1 MHz VDS = 25V
50 40 30
TJ = 25C TJ = 125C
20
Coss Crss
10
10
15
20
25
0 0.00
0.25
0.50
0.75
1.00
1.25
1.50
VCE - Volts
VSD - Volts
Fig.11 Transient Thermal Impedance
1
Thermal Response - K/W
D=0.5
0.1
D=0.2 D=0.1 D=0.05
0.01 D=0.02
D=0.01 Single Pulse
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2000 IXYS All rights reserved
4-4
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